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Advances in Materials Science and Engineering
Volume 2012 (2012), Article ID 872597, 5 pages
Research Article

Luminescence and Structure of ZnO Grown by Physical Vapor Deposition

1Departamento de Investigación en Física, Universidad de Sonora, 83000 Hermosillo, SON, Mexico
2División de Estudios de Posgrado, Facultad de Ingeniería Química (UMSNH), Ciudad Universitaria, Edificio V-1, Morelia, MICH, Mexico
3Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apdo. Postal 2681, 22800 Ensenada, BC, Mexico

Received 15 August 2012; Revised 18 November 2012; Accepted 7 December 2012

Academic Editor: Markku Leskela

Copyright © 2012 R. García-Gutiérrez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Nanostructured ZnO was deposited on different substrates (Si, SiO2, and Au/SiO2) by an enhanced physical vapor deposition technique that presents excellent luminescent properties. This technique consists in a horizontal quartz tube reactor that uses ultra-high purity Zn and UHP oxygen as precursors. The morphology and structure of ZnO grown in this work were studied by electron microscopy and X-ray diffraction. The XRD patterns revealed the highly crystalline phase of wurtzite polycrystalline structure, with a preferred (1011) growth direction. Room temperature cathodoluminescence studies revealed two features in the luminescence properties of the ZnO obtained by this technique, first a high-intensity narrow peak centered at 390 nm (~3.2 eV) corresponding to a near band-to-band emission, and secondly, a broad peak centered around 517 nm (2.4 eV), the typical green-yellow luminescence, related to an unintentionally doped ZnO.