Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
Figure 3
HRBS spectra of both the Si and Co edges: (a) 5.93 ML of Co deposited at −60°C and (b) 23.42 ML of Co deposited at room temperature (22°C), together with simulations of the spectra by RUMP (solid lines through the data). The insets show the Si and Co concentrations at the interface as obtained from the RUMP simulations (depth scale: monolayers of Si, each at./cm2 thick). The right hand side of the concentration profiles corresponds to the free surface of the Co/Si. Layer 0 was deliberately put into the Si bulk.
