Various plating methods; anneal at 400°C, 10 min in forming gas
Cu light-induced plate
Cu electroplating solution, 5 min under high-intensity fluorescent light
Cut with a 1064 nm Nd : YAG laser from the rear; cut way thru wafer then snapped
Ni plating was done in one of two ways: (i) electroless Ni using Transene EN solution , 80°C for 3 min; or (ii) BA-LIP Ni, 25–30°C for 30 s under high-intensity fluorescent light. The BA-LIP Ni consisted of Watt’s solution in the ratios 10 g Ni2SO4, 20 g NiCl2, 4 g boric acid in 100 mL deionized water . The electroplating solution for the Cu plating used 12 g CuSO4, 11 mL H2SO4, and 50 mL deionized water.