Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

<table>Temperature dependence of set voltage (<svg height="15.4" id="M58" style="vertical-align:-3.39069pt" version="1.1" viewbox="0 0 26.512501 15.4" width="26.512501" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>) and reset voltage (<svg height="15.4" id="M59" style="vertical-align:-3.39069pt" version="1.1" viewbox="0 0 35.825001 15.4" width="35.825001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>) on Pt/ZnO/Pt devices.</table>

Advances in Materials Science and Engineering

fig5

Figure 5

Figure 5: Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices 