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Advances in Materials Science and Engineering
Volume 2013, Article ID 692469, 8 pages
http://dx.doi.org/10.1155/2013/692469
Research Article

Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

1Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan
2Green Devices Research Center, Japan Advanced Institute of Science and Technology (JAIST), 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan
3Yokkaichi Research Center, JSR Corporation, Yokkaichi 510-8552, Japan
4School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1211, Japan

Received 11 October 2013; Accepted 27 November 2013

Academic Editor: Tung-Ming Pan

Copyright © 2013 P. T. Tue et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

P. T. Tue, T. Miyasako, E. Tokumitsu, and T. Shimoda, “Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor,” Advances in Materials Science and Engineering, vol. 2013, Article ID 692469, 8 pages, 2013. https://doi.org/10.1155/2013/692469.