Research Article
Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide
Table 1
Capture cross-section of surface states at the oxide/Si interface.
| | Oxide material | Capture cross-section | Deposition method | Measurement technique |
| | SiO2 |
1–4 × 10−16 cm2 | Thermal oxidation | Charge pumping [22–24] | | ZrO2 | 5.8 × 10−16 cm2 | rf sputtering | Gated diode [25] | | Al2O3 | 1.7 × 10−15 cm2 | PECVD | DLTS [26] | | CeO2 | 8.7 × 10−15 cm2 | rf sputtering | Gated diode [27] | | CeO2 | 9.0 × 10−15 cm2 | rf sputtering | Charge pumping [28] | | HfO2 | 9.4 × 10−15 cm2 | ALD | Charge pumping [29] | | HfO2 | 2.4 × 10−15 cm2 | rf sputtering | Gated diode (this work) |
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PECVD: plasma-enhanced chemical vapor deposition, DLTS: deep-level transient spectroscopy, and ALD: atomic layer deposition.
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