Advances in Materials Science and Engineering / 2013 / Article / Tab 1

Research Article

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Table 1

Capture cross-section of surface states at the oxide/Si interface.

Oxide materialCapture cross-sectionDeposition methodMeasurement technique

SiO2 1–4 × 10−16 cm2Thermal oxidationCharge pumping [2224]
ZrO25.8 × 10−16 cm2rf sputteringGated diode [25]
Al2O31.7 × 10−15 cm2PECVDDLTS [26]
CeO28.7 × 10−15 cm2rf sputteringGated diode [27]
CeO29.0 × 10−15 cm2rf sputteringCharge pumping [28]
HfO29.4 × 10−15 cm2ALDCharge pumping [29]
HfO2 2.4 × 10−15 cm2rf sputteringGated diode (this work)

PECVD: plasma-enhanced chemical vapor deposition, DLTS: deep-level transient spectroscopy, and ALD: atomic layer deposition.

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