Advances in Materials Science and Engineering / 2014 / Article / Fig 1

Research Article

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Figure 1

Equivalent circuits for conductance measurements; (a) MOS- with interface trap time constant , (b) simplified circuit of (a), and (c) measured circuit.
497274.fig.001a
(a)
497274.fig.001b
(b)
497274.fig.001c
(c)

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