Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices

<table>Variation of flatband voltage with oxide thickness for (a) ZrO<sub>2</sub> and (b) HfO<sub>2</sub>.</table>

Advances in Materials Science and Engineering

Figure 2: Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices 