Advances in Materials Science and Engineering / 2014 / Article / Fig 6

Research Article

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Figure 6

and frequency for (a) ZrO2 and (b) HfO2 at different EOT.
497274.fig.006a
(a)
497274.fig.006b
(b)

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