Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices

<table><svg height="12.1839pt" id="M118" style="vertical-align:-3.37758pt" version="1.1" viewbox="0 -8.80632 15.6301 12.1839" width="15.6301pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M743 375C743 570 607 650 407 650H136L130 622C214 612 220 606 204 526L125 122C110 43 105 36 24 27L17 0H250C382 0 482 23 571 76C680 141 743 248 743 375ZM644 379C644 188 520 36 305 36C277 36 249 38 229 46C205 55 202 71 212 126L293 553C300 588 306 600 317 606C330 613 356 617 390 617C547 617 644 537 644 379Z" id="g113-69"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="766" vert-adv-y="766"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,10.31,3.264)"><path d="M135 536C164 536 186 560 186 587C186 617 164 639 136 639C109 639 85 617 85 587C85 560 109 536 135 536ZM252 0V26C188 32 181 38 181 106V451C138 433 90 420 39 412V388C99 379 102 374 102 312V106C102 38 95 32 32 26V0H252Z" id="g190-106"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="268" vert-adv-y="268"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,12.738,3.264)"><path d="M298 36L289 62C276 55 253 45 228 45C202 45 169 60 169 141V397H276C289 405 292 426 282 437H169V574L155 576L90 509V437H45L17 408L21 397H90V107C90 28 125 -12 188 -12C198 -12 213 -8 230 1L298 36Z" id="g190-117"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="305" vert-adv-y="305"></glyph.data></g></svg> and frequency for (a) ZrO<sub>2 </sub>and (b) HfO<sub>2</sub> at different EOT.</table>

Advances in Materials Science and Engineering

fig6

Figure 6

Figure 6: Study of Interface Charge Densities for ZrO<sub>2</sub> and HfO<sub>2</sub> Based Metal-Oxide-Semiconductor Devices 

Advances in Materials Science and Engineering

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Figure 6

Study of Interface Charge Densities for ZrO₂ and HfO₂ Based Metal-Oxide-Semiconductor Devices