Advances in Materials Science and Engineering / 2014 / Article / Tab 1

Research Article

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Table 1

Properties of high- dielectric materials.

Material Band gap, (eV)Band offset to Si (eV)Crystal structure

SiO23.993.5Amorphous
Si3N475.32.4Amorphous
Al2O39.38.82.8Amorphous
HfSiO41561.5Amorphous
Y2O31562.3Cubic
ZrSiO41561.5Amorphous
HfO22261.5Monoclinic, tetragonal
ZrO2225.81.4Monoclinic, tetragonal
Ta2O5264.40.3Orthorhombic
La2O33062.3Hexagonal, cubic

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