Research Article
Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices
Table 1
Properties of high-
dielectric materials.
| | Material | |
Band gap, (eV) | Band offset to Si (eV) | Crystal structure |
| | SiO2 | 3.9 | 9 | 3.5 | Amorphous | | Si3N4 | 7 | 5.3 | 2.4 | Amorphous | | Al2O3 | 9.3 | 8.8 | 2.8 | Amorphous | | HfSiO4 | 15 | 6 | 1.5 | Amorphous | | Y2O3 | 15 | 6 | 2.3 | Cubic | | ZrSiO4 | 15 | 6 | 1.5 | Amorphous | | HfO2 | 22 | 6 | 1.5 | Monoclinic, tetragonal | | ZrO2 | 22 | 5.8 | 1.4 | Monoclinic, tetragonal | | Ta2O5 | 26 | 4.4 | 0.3 | Orthorhombic | | La2O3 | 30 | 6 | 2.3 | Hexagonal, cubic |
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