Advances in Materials Science and Engineering / 2014 / Article / Tab 3

Research Article

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

Table 3

value for ZrO2 and HfO2 at different EOT at 1 MHz.

EOT (nm)ZrO2 (cm−2 ev−1)HfO2 (cm−2 ev−1)

1.77
2.65
3.54

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