Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Figure 6

Calculated short-circuit current density versus the InGaN layer thickness demonstrating the improvement as a result of the structure design incorporating the GaN cap layer. Comparison between the improved structure with the GaN cap layer in Figure 1(d), the initial structure without the GaN cap layer in Figure 1(c), and the reference structure shown in Figure 1(b).