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Advances in Materials Science and Engineering
Volume 2016, Article ID 2826795, 7 pages
Research Article

Angular Dependence of Spin Transfer Switching in Spin Valve Nanopillar Based Heusler Alloy

1KKU-Seagate Cooperation Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Khon Kaen University, Khon Kaen 40002, Thailand
2Department of Physics and Astronomy, MINT Center, University of Alabama, Tuscaloosa, AL 35487, USA

Received 1 December 2015; Revised 14 April 2016; Accepted 3 May 2016

Academic Editor: Santiago Garcia-Granda

Copyright © 2016 Pirat Khunkitti et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The spin transfer induced magnetization switching in current perpendicular-to-the-plane spin valve nanopillar based Co2FeAl0.5Si0.5 Heusler alloy with varying the initial angles of the magnetization of sensing layer, , was investigated via macrospin simulations. The effects of an in-plane magnetic field, , on the switching behavior were also evaluated. The magnetization switching was excited by spin polarized switching current, . The time varying magnetization was computed by the Landau-Lifshitz-Gilbert-Slonczewski equation, while the spin transfer induced noise was examined by using the power spectral density analysis. It was found that should be narrowly initialized since this configuration produces the small noise during the switching. Also, the negative produced more uniform switching than the positive due to existence of ferromagnetic exchange coupling. When was presented, the noise generated at low frequencies could be suppressed, and then the switching behavior became more uniform. In addition, the results indicated that the noise configuration could be explained by the physical dynamic of magnetization behavior. Hence, the spin transfer induced noise needs to be minimized in order to improve the performance of spin transfer torque random access memory for high density recording.