Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

<div>Resistance analysis of the TiN thin film as a function of postmetal annealing temperatures.</div>

Advances in Materials Science and Engineering

Figure 2: Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors 