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Advances in Materials Science and Engineering
Volume 2016, Article ID 4154256, 11 pages
Research Article

Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

1Silicon Technologies Centre of Excellence, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
2Optoelectronics Research Centre, Building 53, University of Southampton, Southampton SO17 1BJ, UK

Received 11 February 2016; Revised 10 May 2016; Accepted 18 May 2016

Academic Editor: Achim Trampert

Copyright © 2016 Callum G. Littlejohns et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.