Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

Figure 12

SiGe composition tuning by varying the RMG annealing temperature. (a) Composition profiles in the central strips of tailored tree-like structures annealed at a range of temperatures. A linear fit has been added to each data set and (b) average Ge composition along the central strip of a tailored tree-like structure as a function of annealing temperature. Only the uniform region up to 56 μm has been considered. The error bars show the maximum and minimum values observed along each strip. = 3 μm, = 65 μm, = 20 μm, = 5 μm, and = 3 μm.

(a)

(b)