Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

<div>SiGe composition profiles for a range of straight strip lengths: (a) as a function of distance from the seed and (b) normalised by dividing the distance from the seed by the total strip length. Strip width = 5 <i>μ</i>m. Estimated maximum SiGe temperature = 1008°C. The strips have been fitted with the complete mixing model [<a href="/journals/amse/2016/4154256/#B33">33</a>].</div>

Advances in Materials Science and Engineering

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Figure 4

Figure 4: Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices 