Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/amse/volume-2017/4903924/figures/4903924.fig.009a.svgz" name="4903924.fig.009a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>Maximum thermal stresses with different thicknesses of Si</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/amse/volume-2017/4903924/figures/4903924.fig.009b.svgz" name="4903924.fig.009b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>Maximum thermal stresses with different thicknesses of GaAs</td></tr></table>

<div>The diagrams of maximum thermal stresses in bonding interfaces with different thicknesses.</div>

Advances in Materials Science and Engineering

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Figure 9

Figure 9: Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses 