Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”

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In the article titled “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” [1], there was an error in reference [] which should be corrected as follows:

“[] Z. N. Khan, S. Ahmed, and M. Ali, “Effect of thermal budget on the electrical characterization of atomic layer deposited HfSiO/TiN gate stack MOSCAP structure,” PLoS ONE, vol. 11, no. 8, Article ID e0161736, 2016.”