Advances in Materials Science and Engineering

Advances in Materials Science and Engineering / 2017 / Article

Erratum | Open Access

Volume 2017 |Article ID 6050541 | https://doi.org/10.1155/2017/6050541

Z. N. Khan, S. Ahmed, M. Ali, "Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”", Advances in Materials Science and Engineering, vol. 2017, Article ID 6050541, 1 page, 2017. https://doi.org/10.1155/2017/6050541

Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”

Received19 Jan 2017
Accepted20 Feb 2017
Published11 Apr 2017

In the article titled “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” [1], there was an error in reference [] which should be corrected as follows:

“[] Z. N. Khan, S. Ahmed, and M. Ali, “Effect of thermal budget on the electrical characterization of atomic layer deposited HfSiO/TiN gate stack MOSCAP structure,” PLoS ONE, vol. 11, no. 8, Article ID e0161736, 2016.”

References

  1. Z. N. Khan, S. Ahmed, and M. Ali, “Electrical characterization of postmetal annealed ultrathin TiN gate electrodes in Si MOS capacitors,” Advances in Materials Science and Engineering, vol. 2016, Article ID 3740517, 4 pages, 2016. View at: Publisher Site | Google Scholar

Copyright © 2017 Z. N. Khan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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