Erratum | Open Access
Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”
In the article titled “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors” , there was an error in reference  which should be corrected as follows:
“ Z. N. Khan, S. Ahmed, and M. Ali, “Effect of thermal budget on the electrical characterization of atomic layer deposited HfSiO/TiN gate stack MOSCAP structure,” PLoS ONE, vol. 11, no. 8, Article ID e0161736, 2016.”
- Z. N. Khan, S. Ahmed, and M. Ali, “Electrical characterization of postmetal annealed ultrathin TiN gate electrodes in Si MOS capacitors,” Advances in Materials Science and Engineering, vol. 2016, Article ID 3740517, 4 pages, 2016.
Copyright © 2017 Z. N. Khan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.