Advances in Materials Science and Engineering / 2019 / Article / Fig 3

Research Article

Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors

Figure 3

TEM image of the (a) material obtained through calcination of the xerogel at 400°C during 2 hour 20 minutes (electron diffraction with d-spacing and corresponding hkl indices for SnO2 (in round brackets) is presented in the inset), (b) undoped, and (c) doped with 0.24 wt.% Pd gas-sensitive materials on the base of nanosized SnO2.

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