Oxide Nanomaterials Based on SnO₂ for Semiconductor Hydrogen Sensors

Figure 3

TEM image of the (a) material obtained through calcination of the xerogel at 400°C during 2 hour 20 minutes (electron diffraction with d-spacing and corresponding hkl indices for SnO₂ (in round brackets) is presented in the inset), (b) undoped, and (c) doped with 0.24 wt.% Pd gas-sensitive materials on the base of nanosized SnO₂.

(a)

(b)

(c)