Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis

<div>(a) Photoluminescence (PL) of 1L–4L MoSe<sub>2</sub>. 1L MoSe<sub>2</sub> has highest PL intensity—stronger PL intensity indicates that bandgap transforms from indirect to direct. Bandgap increases with the decrease in thickness. (b) PL of 1L–3L and bulk WSe<sub>2</sub>, with the same trend as MoSe<sub>2</sub>.</div>

Advances in Materials Science and Engineering

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Figure 4

Figure 4: Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis 