Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Figure 6

Results of photoluminescence (PL) measurements for different samples, each with 4 QD layers, but different GaAs single-layer barrier thickness. The QD layers have been grown with a V/III flux ratio of 1 : 1, a substrate growth temperature of 530°C, and a nominal coverage of 3 ML. The base width of these QDs is 25 nm, and their height is 3 nm. For typical As-content, refer to Figure 5.