Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Figure 8

Results of photoluminescence (PL) measurements for three different samples, each with 4 QD layers, but double-layer barriers. Each barrier is made from a 20 nm thick GaAs capsule layer and an Al_0.5Ga_0.5As layer of either one of three possible thicknesses, that is, 10 nm, 30 nm, and 40 nm. The QD layers have been grown as described for the samples shown in Figure 6.