Advances in Materials Science and Engineering

Modification, Synthesis, and Analysis of Advanced Materials Using Ion Beam Techniques


Publishing date
01 Jan 2012
Status
Published
Submission deadline
01 Jul 2011

Lead Editor

1Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany

2Industrial Technology Center of Nagasaki, Omura, Nagasaki, 856-0026, Japan

3Institute for Environmental Research , Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW 2234, Australia

4Department of Electronic Materials Engineering, Australian National University, Canberra, ACT 0200, Australia

5Department of Materials Analytics, Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany

6Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1121 Budapest, Hungary


Modification, Synthesis, and Analysis of Advanced Materials Using Ion Beam Techniques

Description

Directed beams of energetic ions are used extensively for the synthesis, modification, and analysis of advanced materials, with major developments being represented in key conference series such as Ion Beam Modifications of Materials (IBMM) and Ion Beam Analysis (IBA).

This special issue will be edited with the aim to give the ion beam community a peer-reviewed collection of original research contributions on the newest developments applying these techniques in the field of materials science.

We invite all researchers to contribute original research articles as well as review articles that can reflect properly the innovative character of these techniques and the huge efforts of technical development that have been made in the recent past.

We have to emphasize that this special issue is a free access publication open to everybody who is interested in this field. Potential topics include, but are not limited to:

  • Particle tracks
  • Single-ion implantation for quantum computing
  • Novel materials synthesis
  • Synthesis of nanostructured materials
  • Interface engineering
  • Atomic transport at interfaces
  • Methods of light-element analysis
  • Radiation effects on reactor materials
  • Ion beam analysis with nanometer resolution
  • Microbeams and focused ion beams
  • Irradiation effects in semiconductors
  • Modification and analysis of magnetic thin films
  • Plasma-based ion implantation

Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/journals/amse/guidelines.html. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/ according to the following timetable:


Articles

  • Special Issue
  • - Volume 2012
  • - Article ID 431297
  • - Editorial

Modification, Synthesis, and Analysis of Advanced Materials Using Ion Beam Techniques

Adam Georg Balogh | Koumei Baba | ... | Joseph Gyulai
  • Special Issue
  • - Volume 2012
  • - Article ID 792973
  • - Research Article

Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide

Ronald Machaka | Bonex W. Mwakikunga | ... | Mathias Herrmann
  • Special Issue
  • - Volume 2012
  • - Article ID 706094
  • - Research Article

Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

L. L. Meisner | A. I. Lotkov | ... | A. L. Matveev
  • Special Issue
  • - Volume 2012
  • - Article ID 902649
  • - Review Article

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

S. P. Dash | D. Goll | ... | H. D. Carstanjen
  • Special Issue
  • - Volume 2012
  • - Article ID 923769
  • - Research Article

Characteristics and Photocatalytic Properties of T i O 2 Thin Film Prepared by Sputter Deposition and Post-N+ Ion Implantation

Haider A. Shukur | Mitsunobu Sato | ... | Ichiro Takano
  • Special Issue
  • - Volume 2012
  • - Article ID 826873
  • - Review Article

Nonstoichiometry in Studied by Ion Beam Methods and Photoelectron Spectroscopy

K. Zakrzewska
  • Special Issue
  • - Volume 2012
  • - Article ID 272694
  • - Review Article

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities

Jeffrey C. McCallum | David N. Jamieson | ... | Jessica A. van Donkelaar
  • Special Issue
  • - Volume 2012
  • - Article ID 610150
  • - Research Article

Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation

Volker Häublein | Heiner Ryssel | Lothar Frey
  • Special Issue
  • - Volume 2012
  • - Article ID 269603
  • - Research Article

Hydrogen Charging Effects in Pd/Ti/TiO2/Ti Thin Films Deposited on Si(111) Studied by Ion Beam Analysis Methods

K. Drogowska | S. Flege | ... | A. G. Balogh
  • Special Issue
  • - Volume 2012
  • - Article ID 180437
  • - Research Article

High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM

James A. Whitby | Fredrik Östlund | ... | Johann Michler
Advances in Materials Science and Engineering
 Journal metrics
Acceptance rate33%
Submission to final decision71 days
Acceptance to publication29 days
CiteScore2.000
Impact Factor1.271
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