Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
Table 8
Overview of doping dependence of dielectric properties of planar BaxSr1−x TiO3:M (M = Fe, Mg, Y, Ti, Zr) thin film capacitors on microwave ceramic substrates. Maximum values of capacity at zero DC bias, value, and tunability are highlighted by bold type. See Figures 19, 20, 21, 22, and 23 for the sample design and selected, more detailed graphs of C and as functions of T for DC bias from 0 to 10 V.
PLD thin film dielectric in Pt-BSTO:X-Pt capacitor
Capacity [nF] @ 0 V and 20°C
value @ 0 V and 20°C
Tunability for @ 20°C
T-coefficient
@, C
Undoped BSTO:
BTO
89
18
5.5
0.44
BSTO-0.8
172 (5 V)*
17 (5 V)*
20.7
0.77
BSTO-0.8 annealed
116
42
7.8
0.46
BSTO-0.6
195 (5 V)*
29 (5 V)*
24.7
−4.6
BSTO-0.5 to 0.85 Gradient H. Christen, ORNL, USA
112 (5 V)*
22 (5 V)*
10.5
−1.14
Doped BTO:
BTO:Fe2O3(0.5%)
83
15
5.6
0.41
BTO:Fe2O3(1%)
206
18
17.0
0.49
BTO:Fe2O3(2%)
35
58
1.2
−0.3
BTO:Fe2O3(5%)
24
49
0.4
−0.11
BTO:MgO(1%)
98 (5 V)*
31 (5 V)*
6.6
−0.08
BTO:MgO(2%)
40 (5 V)*
14 (5 V)*
0.5
−0.08
BTO:Y2O3(1%)
49
17
2.9
0.19
BTO:Y2O3(2%)
149
18
12.2
0.39
BTO:Y2O3(2%) annealed
118
26
9.4
0.43
BTO:TiO2(3%)
90 (5 V)*
23 (5 V)*
9.0
−0.003
BTO:TiO2(3%) annealed
136
38
9.8
0.09
BaTi0.8Zr0.2O3
78
24
5.5
−0.6
*For these samples the maximum DC bias was 5 V, because of the leackage currents.
