Table 8: Overview of doping dependence of dielectric properties of planar BaSr_{x}_{1−x }TiO_{3}:M (M = Fe, Mg, Y, Ti, Zr) thin film capacitors on microwave ceramic substrates. Maximum values of capacity at zero DC bias, value, and tunability are highlighted by bold type. See Figures 19, 20, 21, 22, and 23 for the sample design and selected, more detailed graphs of C and as functions of T for DC bias from 0 to 10 V. | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||

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*For these samples the maximum DC bias was 5 V, because of the leackage currents. |