Table of Contents
Advances in Electrical Engineering
Volume 2014 (2014), Article ID 423803, 5 pages
http://dx.doi.org/10.1155/2014/423803
Research Article

Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Power Transistors Division, STMicroelectronics, Catania, Italy

Received 4 June 2014; Revised 31 July 2014; Accepted 19 August 2014; Published 3 November 2014

Academic Editor: Changhwan Shin

Copyright © 2014 Ignazio Bertuglia et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper studies the effects of proton irradiations on Super Junction High Voltage power MOSFETs to realize transistors with fast diode. Experiments were performed on a sample of 600 V power MOSFETs and achieved results were compared to standard irradiated devices by electrons.