Table of Contents
Advances in Electrical Engineering
Volume 2014, Article ID 423803, 5 pages
Research Article

Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Power Transistors Division, STMicroelectronics, Catania, Italy

Received 4 June 2014; Revised 31 July 2014; Accepted 19 August 2014; Published 3 November 2014

Academic Editor: Changhwan Shin

Copyright © 2014 Ignazio Bertuglia et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. P. Hazdra, J. Vobecký, and K. Brand, “Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques,” Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, vol. 186, no. 1–4, pp. 414–418, 2002. View at Publisher · View at Google Scholar · View at Scopus
  2. J. Lutz, R. Siemieniec, F. J. Niedernostheide, and H. J. Schulze, “Characteristics of irradiation induced deep levels in silicon,” in Proceeding of the Solid State Chemistry and Modern Micro- and Nanotechnologies Conference, Kislovodsk, Russia, 2005.
  3. M. Schmitt, H.-J. Schulze, A. Schlogl et al., “A Comparison of Electron, Proton and Helium Ion Irradiation for the Optimization of the CoolMOSTM Body Diode,” Infineon Technologies AG, AI PS DD, Balanstr. 59, D-81541 Munich, Germany, 2011.
  4. V. Benda, “Design considerations for fast soft reverse recovery diodes,” in Proceedings of the 15th European Conference on Power Electronics and Applications, Brighton, UK, September 1993.
  5. P. Lévêque, P. Pellegrino, A. Hallén, B. G. Svensson, and V. Privitera, “Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon,” Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 174, no. 3, pp. 297–303, 2001. View at Publisher · View at Google Scholar · View at Scopus
  6. T. Mizushima, M. Nemoto, H. Kuribayashi, T. Yoshimura, and H. Nakazawa, “Inhibiting effect of middle broad buffer layer diode using hydrogen-related shallow donor on reverse recovery oscillation,” in Proceedings of the 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD '10), pp. 115–118, June 2010.
  7. R. Siemieniec, F.-J. Niedernostheide, H.-J. Schulze, W. Südkamp, U. Kellner-Werdehausen, and J. Lutz, “Irradiation-induced deep levels in silicon for power device tailoring,” Journal of the Electrochemical Society, vol. 153, no. 2, pp. G108–G118, 2006. View at Publisher · View at Google Scholar · View at Scopus