Ty R. McNutt

Northrop Grumman Corporation, USA

Ty McNutt received the B.S. degree in physics with distinction from Hendrix College, Conway, Ark, in 1998, and the M.S. and Ph.D. degrees in electrical engineering from the University of Arkansas, Fayetteville, Ark, in 2001 and 2004, respectively. Dr. McNutt worked as a guest researcher at the National Institute of Standards and Technology (NIST) from 2000 through 2004 concentrating on the characterization and modeling of silicon carbide (SiC) power devices. While at NIST, he earned the William M. Portnoy Award for the group paper at the IEEE 39th Annual Meeting of the Industry Applications Society in October 2004. In 2004, Dr. McNutt joined the Compound Semiconductor Research Group at Northrop Grumman's Advanced Materials & Semiconductor Device Technology Center in Baltimore, Md, where he concentrated on the development of advanced SiC power devices. In 2007, Dr. McNutt became a Program Manager in the Systems Development and Technology Division at Northrop Grumman. He has coauthored over 40 publications in various refereed journals and conference proceedings, and he is a Member of the IEEE Power Electronics Society, IEEE Electron Device Society, and Eta Kappa Nu (HKN) Electrical and Computer Engineering Honor Society.

Biography Updated on 5 April 2007

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