Qi Wang

Lanzhou University, China

Qi Wang received his B.S. degree in electronic materials and devices engineering from the Lanzhou University, Lanzhou, China, in 2004, and received his Ph.D. degree in the condensed matter physics from the Lanzhou University, Lanzhou, China, in 2009. Then, he joined the Lanzhou University, and during 2011 to 2014 he joined Professor Masakazu Aono (the father of atomic switch) and Professor Hasegawa’s group as a Postdoctoral Fellow. His research interests are focused on new conceptual RAM and logic device, anode materials for lithium ion secondary battery, and carbon film material. Wang first suggested and performed a new transistor based on oxygen vacancy. He has published over 20 papers, for example, Applied Physics Letter, Nanotechnology, and Journal of Applied Physics.

Biography Updated on 10 September 2014

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