Keun Hwi Cho

Samsung, Republic of Korea


Keun Hwi Cho received the B.S. degree in physics and the M.S. and Ph.D. degrees in electronics and computer engineering from Korea University, Seoul, Korea, in 2001, 2003, and 2007, respectively. In 2006, he joined Semiconductor R&D Center, Samsung Electronics Company, Yongin, Korea, where he was involved in research and development of advanced nano-CMOS transistors such as gate-all-around MOSFET and FinFET. From 2011 to 2012, Cho worked with ISDA, Hopewell Junction, NY, USA, for 20nm node development on layout dependent effects. Currently, he is focusing on research and development of 10nm technology as a senior engineer.

Biography Updated on 5 January 2013

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