This paper proposes a multi-input single-output (MISO) second-order active-C voltage mode (VM) universal filter using two second-generation current-controlled current conveyors (CCCIIs) and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (<svg style="vertical-align:-2.92279pt;width:15.1875px;" id="M1" height="9.9375" version="1.1" viewBox="0 0 15.1875 9.9375" width="15.1875"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,9.9375)">
		<g transform="translate(72,-64.05)">
			<text transform="matrix(1,0,0,-1,-71.95,67.01)">
				<tspan style="font-size: 11.21px; " x="0" y="0">𝜔</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-64.32,64.21)">
				<tspan style="font-size: 7.85px; " x="0" y="0">0</tspan>
			</text>

		</g>
	</g>
</svg>) and quality factor (<svg style="vertical-align:-2.92279pt;width:16.5875px;" id="M2" height="13.1125" version="1.1" viewBox="0 0 16.5875 13.1125" width="16.5875"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,13.1125)">
		<g transform="translate(72,-61.51)">
			<text transform="matrix(1,0,0,-1,-71.95,64.47)">
				<tspan style="font-size: 11.21px; " x="0" y="0">𝑄</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-63.2,61.67)">
				<tspan style="font-size: 7.85px; " x="0" y="0">0</tspan>
			</text>

		</g>
	</g>
</svg>) via bias current of CCCIIs. PSPICE simulation results confirm the theory.

Ashish Ranjan

Sajal K. Paul

Voltage Mode Universal Biquad Using CCCII

The goal of this research was to test the effects of seacoast atmosphere on tantalum capacitors. Four tests were chosen for this purpose: the 85/85 test was chosen for testing the effects of the combination of high humidity and high temperature, salt spray testing was done for examining the effects of high humidity and salt, temperature cycling test was applied for testing the effects of temperature changes, and a 100&#37; RH humidity test was developed for examining the effects of very high humidity. The results show that combination of high humidity and high temperature did not possess a significant risk for these capacitors during their normal use. Very high humidity and radical temperature changes both affected the breakdown voltages of tantalum capacitors. Salt fog caused corrosion of these components and had a small effect on breakdown voltage but did not have an effect on capacitance or ESR.

Johanna Virkki

Pasi Raumonen

Testing the Effects of Seacoast Atmosphere on  Tantalum Capacitors

A comb-line filter with a coupling capacitor in the ground plane is proposed. The filter consists of two quarter-wavelength microstrip resonators. A coupling capacitor is inserted into the ground plane in order to build strong coupling locally along the resonators. The filtering characteristics are investigated through numerical simulations as well as experiments. Filtering characteristics that have attenuation poles at both sides of the passband are obtained. The input susceptances of even and odd modes and coupling coefficients are discussed. The filters using stepped impedance resonators (SIRs) are also discussed, and the effects of the coupling capacitor for an SIR structure are shown.

Toshiaki Kitamura

Comb-Line Filter with Coupling Capacitor in Ground Plane

A universal voltage-mode filter (VM) and a current-mode filter (CM) based on recently proposed active building block, namely, differential voltage current conveyor transconductance amplifier (DVCCTA) are proposed. Both the circuits use a single DVCCTA, two capacitors, and a single resistor. The filters enjoy low-sensitivity performance and low component spread and exhibit electronic tunability of filter parameters via bias currents of DVCCTA. SPICE simulation using 0.25 μm TSMC CMOS technology parameters is included to show the workability of the proposed circuits.

Neeta Pandey

VM and CM Universal Filters Based on Single DVCCTA

A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued.

Nikhil M. Kriplani

Stephen Bowyer

Jennifer Huckaby

Michael B. Steer

Modelling of an Esaki Tunnel Diode in a Circuit Simulator

The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (<svg style="vertical-align:-0.1638pt;width:8.6625004px;" id="M1" height="7.9499998" version="1.1" viewBox="0 0 8.6625004 7.9499998" width="8.6625004" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path id="x1D45B" d="M495 86q-46 -47 -87 -72.5t-63 -25.5q-43 0 -16 107l49 210q7 34 8 50.5t-3 21t-13 4.5q-35 0 -109.5 -72.5t-115.5 -140.5q-21 -75 -38 -159q-50 -10 -76 -21l-6 8l84 340q8 35 -4 35q-17 0 -67 -46l-15 26q44 44 85.5 70.5t64.5 26.5q35 0 10 -103l-24 -98h2&#xA;q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" /></g></svg>), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential <svg style="vertical-align:-3.27605pt;width:51.837502px;" id="M2" height="16.275" version="1.1" viewBox="0 0 51.837502 16.275" width="51.837502" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,12.137)"><path id="x1D449" d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" /></g><g transform="matrix(.012,-0,0,-.012,12.675,16.212)"><path id="x44" d="M43 650h280q194 0 282 -85q85 -82 85 -215q0 -173 -123 -267q-107 -83 -297 -83h-236v27q65 5 79.5 19.5t14.5 77.5v402q0 45 -6 62.5t-21.5 24t-57.5 9.5v28zM213 547v-416q0 -55 24.5 -75t81.5 -20q133 0 203 86t70 214q0 80 -30 143t-88 97q-66 41 -170 41&#xA;q-62 0 -78 -13q-13 -9 -13 -57z" /></g><g transform="matrix(.012,-0,0,-.012,21.325,16.212)"><path id="x45" d="M517 162l29 -4q-18 -100 -35 -158h-482v28q68 5 83.5 20t15.5 77v398q0 66 -13 80t-73 19v28h446q0 -8 8 -144l-29 -4q-11 51 -32 85q-11 17 -35 23t-78 6h-76q-23 0 -28 -5t-5 -27v-228h94q67 0 83 12t25 63h29v-191h-29q-10 54 -26 65.5t-81 11.5h-95v-189&#xA;q0 -65 24 -81q19 -13 104 -13q57 0 83 7t43 27q28 33 50 94z" /></g><g transform="matrix(.017,-0,0,-.017,28.7,12.137)"><path id="x28" d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" /></g><g transform="matrix(.017,-0,0,-.017,34.582,12.137)"><path id="x1D447" d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22&#xA;t37 -4h417q23 0 33.5 5t25.5 21h23z" /></g><g transform="matrix(.017,-0,0,-.017,45.903,12.137)"><path id="x29" d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" /></g></svg>, based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

Agnes Nagy

Alicia Polanco

Manuel Alvarez

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

S. Taking

D. MacFarlane

E. Wasige

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results


					 We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous <svg style="vertical-align:-1.99126pt" id="M1" height="12.075" version="1.1" viewBox="0 0 67.025002 12.075" width="67.025002"  xmlns="http://www.w3.org/2000/svg"    >
	<g transform="matrix(1.25,0,0,-1.25,0,12.075)">
		<g transform="translate(72,-62.34)">
			<text transform="matrix(1,0,0,-1,-71.95,64.37)">
				<tspan style="font-size: 11.21px; " x="0" y="0">𝑁</tspan>
				<tspan style="font-size: 11.21px; " x="9.5380077" y="0">(</tspan>
				<tspan style="font-size: 11.21px; " x="13.270272" y="0">𝑁</tspan>
				<tspan style="font-size: 11.21px; " x="25.296455" y="0">−</tspan>
				<tspan style="font-size: 11.21px; " x="35.462112" y="0">1</tspan>
				<tspan style="font-size: 11.21px; " x="41.066113" y="0">)</tspan>
				<tspan style="font-size: 11.21px; " x="44.798374" y="0">/</tspan>
				<tspan style="font-size: 11.21px; " x="47.9142" y="0">2</tspan>
			</text>

		</g>
	</g>
</svg> tracking relations among <svg style="vertical-align:-0.0pt" id="M2" height="9.2749996" version="1.1" viewBox="0 0 13.3125 9.2749996" width="13.3125"  xmlns="http://www.w3.org/2000/svg"    >
	<g transform="matrix(1.25,0,0,-1.25,0,9.275)">
		<g transform="translate(72,-64.58)">
			<text transform="matrix(1,0,0,-1,-71.95,64.63)">
				<tspan style="font-size: 11.21px; " x="0" y="0">𝑁</tspan>
			</text>

		</g>
	</g>
</svg> transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among <svg style="vertical-align:-0.0pt" id="M3" height="9.2749996" version="1.1" viewBox="0 0 13.3125 9.2749996" width="13.3125"  xmlns="http://www.w3.org/2000/svg"    >
	<g transform="matrix(1.25,0,0,-1.25,0,9.275)">
		<g transform="translate(72,-64.58)">
			<text transform="matrix(1,0,0,-1,-71.95,64.63)">
				<tspan style="font-size: 11.21px; " x="0" y="0">𝑁</tspan>
			</text>

		</g>
	</g>
</svg> transistors.

Ning Lu

Modeling of Transistor&#39;s Tracking Behavior in Compact Models

About this journal

<p><em>Active and Passive Electronic Components </em>provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.</p>


Journal profile

Meet the editorial board

<p><em>Active and Passive Electronic Components </em>maintains an Editorial Board of practicing researchers from around the world, to ensure manuscripts are handled by editors who are experts in the field of study.</p>


Editor spotlight

Submit your proposal

Do you think there is an emerging area of research that really needs to be highlighted? Or an existing research area that has been overlooked or would benefit from deeper investigation? Raise the profile of a research area by leading a Special Issue.

Special Issues

Author guidelines

Editorial board

Databases and indexing

Active and Passive Electronic Components - Table of contents 2011

Active and Passive Electronic Components | Hindawi

title

Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

description

https://images.hindawi.com/journals/apec/apec.banner.jpg

Active and Passive Electronic Components