The present paper deals with design and realization of a new mass flow sensor using thePeltier effect. The sensor, shaped as a bimetallic circuit includes two continuous parallelstrips coated with a great deal of metal plated spots. In such a device, one track performsas a classical thermoelectrical circuitry whose both plated and uncoated parts providethe thermopile junctions. The other strip is subjected to electrical current so as to generatenumerous small thermal gradients owing to the Peltier effect. Then, the resultingdifferences in temperature induce a Seebeck e.m.f. detected by the other strip actingas a receiver. The thermal coupling between transmitter and receiver tracks depends onmany variation of the surrounding environment heat transfer coefficient. Therefore,such a device allows us to detect any shift in physical properties related to the apparentthermal conductivity. In special case of a steady state fluid, the induced e.m.f. in thereceiving track hinges on the thermal conductivity. When the fluid is in relative motionalong the sensor, the velocity can be read out as a funotion of voltage as an application,the sensor is placed into a tube conducting a fluid flow, in order to design a new massflowmeter.

M.  Rahmoun

A.  El Hassani

D.  Leclerq

E.  Bendada

Peltier Effect Appliedto the Design and Realizationof a New Mass Flow Sensor

A new multi-function high-order current-driven filter is proposed. The filter uses onlyoperational amplifiers, and operational transconductance amplifiers (OTAs). Withoutusing any external passive elements, a variety of high-order input-current/output-currentand/or input-current/output-voltage responses can be realised without changing thecircuit topology and without any matching or cancellation conditions. The parameters ofthe high-order filter responses can be electronically tuned by adjusting the bias currentsof the OTAs.

Muhammad Taher Abuelma&#39;atti

Husain Abdullah Alzaher

Multi-Function Active-Only High-Order Current-Driven Filter

The present paper deals with design and realization of a New thermoelectric sensoradapted to conceive a circuit breaker, using the thermoelectric effects (Joule, Peltier andSeebeck). The sensor includes two printed circuits. The first is constituted of two resistivetracks of constantan, it is the transmitting circuit. The second, a planar thermoelectriccircuit acting as a receiver, is constituted of many plated differential thermocouples. Thetransmitting circuit is placed on the top surface of the receiver circuit so that the resistivetracks are placed on the levels of thermoelectric junctions. The measuring methodconsists to passing electrical currents through the resistive tracks in order to generatetemperature gradients between junction points of the bimetallic circuit. Then the resultingtemperature differences between junction points is directly converted into a proportionalSeebeck voltage. As an application, the sensor is adapted to realize a differentialcircuit-breaker with a low difference current.

K.  Hachami

D.  Moussaid

Design and Realization a New Thermoelectric Sensor, Application

A new method for extracting junction parameters of the single diode model is presented.A least squares method approach considers the deviation &#8710;V=f(I) between theexperimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic.A specific case- the &#8710;V graph reducing to a straight line&#8211;is identified and theknowledge of the slope and of the intercept with the ordinate axis leads to the determinationof the junction parameters. The method is applied to the characterization ofthe emitter-base junction of transistors and the results are discussed.

S.  Dib

M.  De La Bardonnie

A.  Khoury

F.  Pelanchon

P.  Mialhe

A New Method for the Extractionof Diode Parameters Usinga Single Exponential Model

We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to the
extremity of the channel near the drain. The gaussian Parameters (standard deviation
and maximum) vary according to the stress. The stress generated defects leads to the
degradation of the threshold voltage. The analysis of the threshold voltage evolution
with stress time allows us to handle informations on the device performances degradation.
The mathematic expression is simple so that the present model is suitable for
circuit simulator.

R. Marrakh

A. Bouhdada

Modeling of Interface Defect Distribution for an n-MOSFETs Under Hot-Carrier Stressing

A method for device characterization is experimented to qualify the relaxable damage in
hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of
the body-drain junction of power HEXFETs is presented for applied stress condition
<mml:math id="E1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mi>g</mml:mi></mml:msub></mml:mrow></mml:math>&#x3D; <mml:math id="E2" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mi>d</mml:mi></mml:msub></mml:mrow></mml:math>/2. Large decrease of the resistance series, of the ideality factor, and of the reverse
recombination current are shown to be related to relaxation time, and are significant
at <mml:math id="E3" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mi>g</mml:mi></mml:msub></mml:mrow></mml:math>&#x3D;&#x2013;<mml:math id="E4" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>V</mml:mi><mml:mi>d</mml:mi></mml:msub></mml:mrow></mml:math>. These effects are discussed and explained by the evolution of the
interface states.

M. Rahmoun

E. Bendada

A. El Hassani

K. Ra&#xEF;s

Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors

New crystal oscillators using the current-feedback operational-amplifier (CFOA) arepresented. Each circuit uses one CFOA, a crystal and, at most, five externally connectedpassive elements. Experimental results are included.

Ahmad  Al-Ghazwani

New Quartz Crystal Oscillators Using the Current-Feedback Operational Amplifier

The simulation principles of monolithic microwave dynamic transistor negatrons(circuits with negative differential active resistance) are introduced. The non-linearmodel has been developed on the basis of non-linear charge model. The equivalentcircuit and Volterra series were used for the calculation of dynamic negatrons&#39;parameters. The expressions were obtained, which give the linear relation betweencurrent and voltage charges and allow calculating the transferring characteristics.Experimental oscillators are described, which confirm the theoretical predictions.

Pavlo  Molchanov

Arun K. Misra

Helen  Linnik

Pavlo  Mulyar

Simulation of the Dynamic Transistor Negatrons

Analytical expressions are obtained for predicting the harmonic and intermodulationperformance of the fiber optic microphone. These expressions are in terms of the ordinaryBessel functions with arguments dependent on the amplitudes of the acoustical excitingsignal.

Nonlinear Distortion of the Fiber Optic Microphone

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components