VLSI Design

Table of Contents: 2001

  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 085054

Quantum Transport Modeling of Current Noise in Quantum Devices

Tanroku Miyoshi | Tetsuo Miyamoto | Matsuto Ogawa
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 038657

A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics

C. Pennetta | L. Reggiani | ... | G. De Nunzio
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 081481

Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models

A. M. Anile | S. F. Liotta | ... | S. Rinaudo
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 035094

Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode

Marcello A. Anile | Jose A. Carrillo | ... | Chi-Wang Shu
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 076808

Three-dimensional Spectral Solution of Schrödinger Equation

A. Trellakis | U. Ravaioli
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 073145

Quantum Potential Approaches for Nano-scale Device Simulation

Hideaki Tsuchiya | Brian Winstead | Umberto Ravaioli
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 026849

An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices

Min Shen | Wai-Kay Yip | ... | J. J. Liou
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 069472

2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors

M. Rousseau | J. C. De Jaeger
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 023186

Measurement and Simulation of Boron Diffusivity in Strained Si1xGex Epitaxial Layers

K. Rajendran | W. Schoenmaker
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 064901

Calculation of Transport Parameters of SiO2 Polymorphs

Elena Gnani | Susanna Reggiani | ... | Massimo Rudan
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 018514

Electronic Transport in Self-organised Molecular Nanostructured Devices

A. Pecchia | B. Movaghar | ... | N. Boden
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 061328

Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

A. Harkar | R. W. Kelsall | J. N. Ellis
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 014941

Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

D. Oriato | Alison B. Walker | W. N. Wang
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 057564

Hot Electron Modelling of HEMTs

Eric A. B. Cole | Christopher M. Snowden | Shahzad Hussain
  • VLSI Design -
  • Special Issue
  • - Volume 13
  • - Article ID 010378

Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation

C. Jungemann | B. Neinhüs | B. Meinerzhagen

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.