VLSI Design

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures

Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach

Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation

Tunneling Between Multimode Stacked Quantum Wires

Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations

Automated Synthesis of Skew-Based Clock Distribution Networks

Monte Carlo Simulation of HEMT based on Self-Consistent Method

Hydrodynamic Device Modeling with Band Nonparabolicity

An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO₂ Quantum Dot

Electron-LA Phonon Interaction in a Quantum Dot

Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

Single-Electron Memories

VLSI Design

Table of Contents

Table of Contents: 1998

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures

Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach

Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation

Tunneling Between Multimode Stacked Quantum Wires

Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations

Automated Synthesis of Skew-Based Clock Distribution Networks

Monte Carlo Simulation of HEMT based on Self-Consistent Method

Hydrodynamic Device Modeling with Band Nonparabolicity

An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO₂ Quantum Dot

Electron-LA Phonon Interaction in a Quantum Dot

Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

Single-Electron Memories

VLSI Design

Table of Contents

Table of Contents: 1998

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si1 – xGex Heterostructures

Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach

Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation

Tunneling Between Multimode Stacked Quantum Wires

Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations

Automated Synthesis of Skew-Based Clock Distribution Networks

Monte Carlo Simulation of HEMT based on Self-Consistent Method

Hydrodynamic Device Modeling with Band Nonparabolicity

An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure

Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot

Electron-LA Phonon Interaction in a Quantum Dot

Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

Single-Electron Memories

Monte Carlo Simulation of Non-Local Transport Effects in Strained Si on Relaxed Si_{1 – x}Ge_x Heterostructures

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO₂ Quantum Dot