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VLSI Design

VLSI Design / Table of Contents: 1998

Table of Contents

Table of Contents: 1998

  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 076350

Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization

Edwin C. Kan | Gyoyoung Jin | ... | Robert W. Dutton
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 072767

Non Local Impact Ionization Effects in Semiconductor Devices

Duilio Meglio | Corrado Cianci | ... | Paolo Lugli
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 087925

Monte Carlo Simulations of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well

R. W. Kelsall
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 046360

Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

Dragica Vasileska | Terry Eldridge | ... | David K. Ferry
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 018794

MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation, Overview and Applications

Mark Peskin | Christine Maziar
  • VLSI Design -
  • Special Issue
  • - Volume 7
  • - Article ID 034910

Minimum Crosstalk Vertical Layer Assignment for Three-Layer VHV Channel Routing

Shashidhar Thakur | Kai-Yuan Chao | D. F. Wong
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 026390

Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

J. B. Roldan | F. Gamiz | ... | J. E. Carceller
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 041638

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

Susanna Reggiani | Maria Cristina Vecchi | Massimo Rudan
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 084262

Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes

Stephen Bennett | Christopher M. Snowden | Stavros Iezekiel
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 069105

Transient Analysis of Silicon Devices Using the Hydrodynamic Model

Luigi Colalongo | Marina Valdinoci | ... | Massimo Rudan
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 037965

A New HEMT Breakdown Model Incorporating Gate and Thermal Effects

Lutfi Albasha | Christopher M. Snowden | Roger D. Pollard
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 021818

Analysis and Simulation of Extended Hydrodynamic Models: The Multi-Valley Gunn Oscillator and MESFET Symmetries

Gui-Qiang Chen | Joseph W. Jerome | Chi-Wang Shu
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 080689

Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

Jürgen Jakumeit | Amanda Duncan | ... | Karl Hess
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 064531

3D Parallel Monte Carlo Simulation of GaAs MESFETs

S. Pennathur | Can K. Sandalci | ... | S. M. Goodnick
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 018156

3-D Device Simulation Using Intelligent Solution Method Control

Daniel C. Kerr | Isaak D. Mayergoyz

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