VLSI Design

Table of Contents: 1998

  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 061791

Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior

S. Ramey | R. Khoie
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 046535

Analysis of Q0-Independent Single-Electron Systems

Konstantin K. Likharev | Alexander N. Korotkov
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 058129

New “Irreducible Wedge” for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations

John Stanley | Neil Goldsman
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 089258

Simulation of Quantum-Dot Structures in Si/SiO2

Minhan Chen | Wolfgang Porod
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 041961

Studies of Chaotic Transport of Electrons in Quantum Boxes

D. K. Ferry | G. Edwards
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 010832

Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System

K. A. Remley | A. Weisshaar | ... | S. M. Goodnick
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 053546

Monte Carlo Simulations of High Field Transport in Electroluminescent Devices

Manfred Dür | Stephen M. Goodnick | ... | Ronald Redmer
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 084685

Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures

Eckehard Schöll
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 096170

Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model

Elizabeth J. Brauer | Marek Turowski | James M. McDonough
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 038298

Numerically Absorbing Boundary Conditions for Quantum Evolution Equations

Anton Arnold
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 081023

New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

J. Jakumeit | U. Ravaioli | K. Hess
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 049783

Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times

B. Neinhüs | S. Decker | ... | B. Meinerzhagen
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 092597

Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations

Alfredo J. Piazza | Can E. Korman
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 034726

Statistical Enhancement of Terminal Current Estimation for Monte Carlo Device Simulation

P. D. Yoder | U. Krumbein | ... | W. Fichtner
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 046212

Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements

A. Marrocco | Ph. Montarnal

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