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VLSI Design

VLSI Design / Table of Contents: 1998

Table of Contents

Table of Contents: 1998

  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 015828

Moving Adaptive Unstructured 3-D Meshes in Semiconductor Process Modeling Applications

Andrew Kuprat | Denise George | ... | R. Kent Smith
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 073698

Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

Paul Hasler | Andreas G. Andreou | ... | Carver A. Mead
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 027313

Modeling of Shot Noise in Resonant Tunneling Structures

G. Iannaccone | M. Macucci | B. Pellegrini
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 058451

Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model

F. Oyafuso | P. von Allmen | ... | K. Hess
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 070137

Shell-Filling Effects in Circular Quantum Dots

M. Macucci | Karl Hess
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 012165

Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes

D. Z.-Y. Ting | T. C. Mcgill
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 053869

The Coupled Optoelectronic Problems of Quantum Well Laser Operation

Matt Grupen | Karl Hess
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 023740

Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation

T. Okada | K. Horio
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 096493

Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering.

Leonard F. Register
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 065364

Study of Electron Velocity Overshoot in NMOS Inversion Layers

Wei-Kai Shih | Srinivas Jallepalli | ... | Al. F. Tasch Jr.
  • VLSI Design -
  • Special Issue
  • - Volume 7
  • - Article ID 081296

Simulated Annealing Approach to Crosstalk Minimization in Gridded Channel Routing

Kyoung-Son Jhang | Soonhoi Ha | Chu Shik Jhon
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 092737

Electron Mobility and Monte Carlo device simulation of MOSFETs

S. Yamakawa | H. Ueno | ... | U. Ravaioli
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 065181

High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

F. M. Bufler | P. Graf | B. Meinerzhagen
  • VLSI Design -
  • Special Issue
  • - Volume 8
  • - Article ID 019078

Hydrodynamic (HD) Simulation of N-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

Haihong Wang | Wei-Kai Shih | ... | Al. F. Tasch
  • VLSI Design -
  • Special Issue
  • Volume 6
  • - Article ID 092921

Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System

M. Macucci | K. Hess

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